کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793579 | 1023679 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–NO–H species, and the lower one perhaps derive from the (NH2)− cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al2p3/2 photoelectron peaks revealed an Al–N bonding state, a key factor to the co-doping method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2341–2344
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2341–2344
نویسندگان
G.D. Yuan, Z.Z. Ye, J.Y. Huang, Z.P. Zhu, C.L. Perkins, S.B. Zhang,