Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy

Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.