Compensation and trapping in large bandgap semiconductors: Tuning of the defect system in CdZnTe

We investigated theoretically the compositional dependences of deep-level ionization energies, and its possible influence on compensation, and photosensitivity in large bandgap semiconductors. Experimentally, it was illustrated in a semi-insulating Cd1−xZnxTe ingot grown by the vertical Bridgman method, whose properties can be explained by the increase in the C-band extrema on an absolute energy scale with an increase of the Zn content, and by the nature of a deep-donor level that is contingent upon the host-crystal's defect states.