کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793600 | 1023679 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The synthesis of Sn-doped ZnO nanowires on ITO substrate and their optical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Single crystalline Sn-doped ZnO nanowires were successfully synthesized on indium tin oxide (ITO)-coated glass substrate by simple thermal evaporation approach without introducing any catalysts. The morphology and microstructure were determined by field emission scanning electron microscopy (FE-SEM), X-ray diffraction, high-resolution transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence (PL) spectroscopy. The investigation confirmed that the products were of the wurtzite structure of ZnO. These doped nanowires have diameters in the range 30-50Â nm and lengths of several tens of micrometers with growth direction along the c-axis of the crystal plane. Photoluminescence of these doped nanowires exhibits a weak ultraviolet (UV) emission peak at around 400Â nm and the strong green emission peak at around 495Â nm at room temperature, which may be induced by the Sn-doping. The growth mechanism of the doped nanowires was also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2466-2469
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2466-2469
نویسندگان
Yong Su, Ling Li, Yiqing Chen, Qingtao Zhou, Mi Gao, Qiong Chen, Yi Feng,