کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793779 | 1023683 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Misoriented domain formation in 6H-SiC single crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Misoriented domain formation in 6H-SiC single crystal Misoriented domain formation in 6H-SiC single crystal](/preview/png/1793779.png)
چکیده انگلیسی
6H-SiC single crystals were grown by the physical vapor transport (PVT) technique. Misoriented domains (MDs) were observed in as-grown crystals. Raman spectra and X-ray diffraction indicated that the MDs are 4H polytype with either (1 0 1¯ 2) or (1 0 1¯ 6) growth plane. Formation probability of MDs increased continuously as the thermal insulator had been repeatedly used. Simulations based on heat transfer demonstrated that the changes of the temperature and the temperature axial gradient at the center of the growth front were responsible for the phenomenon. The formation mechanism was put forward in terms of atomic structure of various crystal planes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 14, 1 July 2009, Pages 3573-3576
Journal: Journal of Crystal Growth - Volume 311, Issue 14, 1 July 2009, Pages 3573-3576
نویسندگان
Bo-Yuan Chen, Xi Liu, Zhi-Zhan Chen, Shao-Hui Chang, Bing Xiao, Er-Wei Shi,