کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1793814 | 1023683 | 2009 | 4 صفحه PDF | دانلود رایگان |
We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (1 1 1) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit cells, the dominant growth mode changes from island to layer-by-layer for the growth rate of 0.074 unit cells/s and the growth temperature of 700 °C. Moreover, in the course of growing SrRuO3 films, the governing growth mode of interest can be manipulated by changing the growth temperature and the growth rate, which change allows for the selection of the desired layer-by-layer mode. The present study thus paves the way for integrations of SrRuO3 thin layers into (1 1 1)-orientated oxide heterostructures, and hence multi-functional devices, requiring control of the sharp atomic-level interfaces and the layer-by-layer growth mode.
Journal: Journal of Crystal Growth - Volume 311, Issue 14, 1 July 2009, Pages 3771–3774