Growth of Ni2MnInNi2MnIn films on InAs and Si

Thin films of the Heusler alloy Ni2MnInNi2MnIn are deposited at substrate temperatures between 50 and 300∘C on a variety of substrates by coevaporation of Ni and the alloy MnIn. The morphology and crystal structure of films grown on amorphous carbon films and Si3N4Si3N4 membranes are investigated by transmission-electron microscopy and transmission-electron diffraction. The stoichiometry of the films is determined by energy-dispersive X-ray spectroscopy. Films on Si(1 0 0), InAs(1 0 0), and in situ cleaved (1 1 0) surfaces of InAs are investigated using scanning-electron microscopy. Point-contact Andreev spectroscopy serves to quantify the spin polarization relevant for transport. The possibility of nanopatterning Ni2MnInNi2MnIn films with the lift-off technique is examined. In this context the influence of post-growth annealing on the film's morphology and crystal structure is studied.