Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films

Nd3+/V5+-cosubstituted Bi4Ti3O12 (Bi3.15Nd0.85Ti2.97V0.03O12, BNTV) thin films are prepared on Pt/Ti/SiO2/Si(1 0 0) substrates by a chemical solution deposition (CSD) technique. The structure and surface morphology of the films are analyzed using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy, respectively. The electrical properties of BNTV films are investigated as a function of annealing temperatures. The remanent polarization, dielectric constant and capacitance of the BNTV thin films increase with the increase of annealing temperatures in the range of 650-750 °C. After annealing at 750 °C, the BNTV film exhibits good polarization fatigue characteristics at least up to 1×1010 switching cycles at a frequency of 100 kHz and excellent retention properties up to 1×105 s.