p-Type behavior in Li-doped Zn0.9Mg0.1O thin films

We report on Li-doped p-type Zn0.9Mg0.1O thin films grown by pulsed laser deposition. An optimal p-type conductivity is achieved at the substrate temperature of 550 °C, namely a resistivity of 45.4 Ω cm, a Hall mobility of 0.302 cm2 V−1 s−1, and a hole concentration of 4.55×1017 cm−3. Additionally, the p-type conductivity is stable over 5 months. From temperature-dependent photoluminescence, the energy level of LiZn acceptor is determined to be 167 meV above the valence band maximum.