کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794208 1023693 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
چکیده انگلیسی

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In–N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1723–1727
نویسندگان
, , , , ,