Research advances on III–V MOSFET electronics beyond Si CMOS

An overview is given on recent advances of science and devices of III–V based and Si MOS and MOSFET. Firstly, we have integrated molecular beam epitaxy (MBE) with atomic layer deposition (ALD) for the growth of excellent high-κ dielectrics with abrupt interfaces, critical for further complementary metal-oxide-semiconductor (CMOS) scaling beyond the 45 nm node. Secondly, we showed that epitaxial yttrium-doped HfO2 films on GaAs(1 0 0) have stabilized the cubic phase, and led to enhancement of κ over 30. Thirdly, inelastic electron tunneling spectroscopy (IETS) was applied to probe the phonon modes and charge trappings within the high-κ dielectrics. Fourthly, scaling of the high-κ oxides approaching 1.0 nm capacitance equivalent thickness (CET) is achieved in a Ga2O3(Gd2O3)[GGO]/In0.2Ga0.8As (InGaAs) gate stack that has undergone 850 °C rapid thermal annealing, and which has unpinned the surface Fermi level of the III–V semiconductor. Finally, we have demonstrated a self-aligned inversion-channel In0.53Ga0.47As MOSFETs made of Al2O3(2 nm)/GGO(7 nm) gate oxide and TiN metal gate at 1-μm gate length, reaching a world record of drain current and transconductance.