کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794290 | 1023694 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser deposition Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser deposition](/preview/png/1794290.png)
The microstructure of P-doped ZnO films grown on the c-plane sapphire substrate by pulsed laser deposition (PLD) was investigated. ZnO films were highly textured along c-axis with two different in-plane orientations. The textured domain was surrounded by the threading dislocations, resulting in the formation of low-angle grain boundary. It was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. For the microstrain study, X-ray diffraction line profile analysis (LPA) was performed. The 0.5 at% P-doped ZnO film showed much higher microstrain than the 1.0 at% P-doped ZnO film as well as as-grown film, which indicated that the phosphorus in former film was effectively incorporated into ZnO film. X-ray photoelectron spectroscopy (XPS) results showed that the phosphorus in 1.0 at% P-doped ZnO film tended towards segregation, which was well consistent with XRD results.
Journal: Journal of Crystal Growth - Volume 311, Issue 11, 15 May 2009, Pages 3143–3146