Effect of LaNiO3 sol concentration on the structure and dielectric properties of Pb(Zr0.53Ti0.47)O3 thin films grown on LaNiO3-coated Si substrates

Pb(Zr0.53Ti0.47)O3 (PZT) thin films were deposited on LaNiO3 (LNO)-coated Si substrates. Both PZT and LNO films are prepared by the sol-gel method combined with the rapid thermal annealing. LNO serves as the bottom electrode and the growth template for PZT thin films simultaneously. The lower LNO sol concentration of 0.1 mol/L is beneficial to growing more densified and smooth LNO thin layers, on which the PZT films exhibit the enhanced dielectric constant and remnant polarization of of 747 and 16 μC/cm2, respectively.