کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794368 | 1023696 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of working gas pressure on structure and properties of CuAlO2 films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuAlO2 thin films were prepared by the radio frequency magnetron sputtering method. The effects of the working gas pressure on structure, optical and electrical properties of the films were investigated. The deposition rate increases with decreasing working gas pressure from 4.0 to 0.5Â Pa. The X-ray diffraction (XRD) patterns show that the CuAlO2 pure phase is achieved for all films and a preferred growth orientation [0Â 0Â l] is evidenced with decreasing working gas pressure. Furthermore, corresponding to the anisotropic electrical property of CuAlO2 thin film, the highest electrical conductivity measured at room temperature is about 1.6Ã10â2Â Scmâ1 for the film deposited at 0.5Â Pa. The Egd and Egi are around 3.55 and 2.00Â eV for CuAlO2 thin films with difference working gas pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1256-1259
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1256-1259
نویسندگان
Guobo Dong, Ming Zhang, Xueping Zhao, Yangchao Li, Hui Yan,