کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794376 1023696 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evolution of Si suboxides into Si nanocrystals during rapid thermal annealing as revealed by XPS and Raman studies
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Evolution of Si suboxides into Si nanocrystals during rapid thermal annealing as revealed by XPS and Raman studies
چکیده انگلیسی

Si nanocrystals (nc-Si) were synthesized by rapid thermal annealing of magnetron-sputtered amorphous SiOx films. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were employed to study the evolution of chemical structures and the rapid growth of nc-Si. XPS results reveal five chemical structures of Si in the as-deposited films corresponding to silicon oxidation states: Sin+ (n=0, 1, 2, 3 and 4). Their bonding structures are found to be inhomogeneous, and far from that predicted by the random-bonding model. XPS and Raman spectra suggest that the formation of amorphous Si nanoclusters had already taken place in the as-deposited samples. Formation of nc-Si was realized through a combination of thermal decomposition and the diffusion process. Upon thermal annealing, Si suboxides (Si2O, SiO and Si2O3) decompose into Si and SiO2, resulting in the rapid growth of nc-Si.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1296–1301
نویسندگان
, , , ,