Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

Topography image variation of threading edge dislocations (TEDs) in 4H-SiC epilayers has been investigated by grazing incidence high-resolution synchrotron topography. Six different images of TEDs resulting from an angle between the diffraction vector and the TED Burgers vector were confirmed by correlation between experimental topography images and simulation results. The TED-type distribution, dependent on the direction of the TED Burger vector, was examined on epitaxial wafers, while the spatial distribution of TEDs on a whole 2 in wafer along [1 1 2¯ 0] and [1 1¯ 0 0] was investigated.