Microstructural properties and atomic arrangements of GaN nanorods grown on Si (1Â 1Â 1) substrates by using hydride vapor phase epitaxy

X-ray diffraction (XRD) patterns, field-emission scanning electron microscopy (FESEM) images, transmission electron microscopy (TEM) images, and selected area electron diffraction pattern (SADP) images showed that one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurzite structures were grown on Si (1 1 1) substrates by using improved hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects. The atomic arrangements for the GaN nanorods grown on the Si (1 1 1) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.