کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794628 | 1524481 | 2008 | 4 صفحه PDF | دانلود رایگان |
Ferroelectric BaTiO3 films with different thicknesses were deposited on “tensile” Si substrates buffered with 100 nm LaNiO3 by radio frequency sputtering. X-ray diffraction measurements demonstrate a high (0 0 1)-orientation and in-plane tensile strain in all BaTiO3 films. With increasing BaTiO3 thickness from 200 to 400 nm, the in-plane lattice constant is decreased and out-of-plane lattice constant increased. High-resolution transmission electron microscopy observations reveal two different in-plane lattice constants in the adjacent twinning domains, thus confirming that the BaTiO3 film is under an in-plane polarization state. The temperature-dependent dielectric measurement results show that the ferroelectric to paraelectric phase transition temperature is enhanced for both BaTiO3 films. However, the enhanced phase transition temperature shows a decrease tendency from 200 to 400 nm BaTiO3, which coincides with the change of lattice constants and can also be interpreted as the result of the internal strain relaxation.
Journal: Journal of Crystal Growth - Volume 310, Issue 24, 1 December 2008, Pages 5327–5330