کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794775 | 1023707 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flow modulation epitaxy of ZnO films on sapphire substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Flow modulation epitaxy of ZnO films on sapphire substrates Flow modulation epitaxy of ZnO films on sapphire substrates](/preview/png/1794775.png)
چکیده انگلیسی
High-quality c-axis-oriented single crystal ZnO films have been grown successfully on sapphire substrates by the flow modulation epitaxy (FME) method using a commercial organometallic vapor phase epitaxy (OMVPE) reactor. Diethylzinc (DEZn) and nitrous oxide (N2O) were used as reactant gases. The growth of ZnO films has been conducted as a function of growth conditions, including temperature, growth rate and susceptor rotation rate. A growth rate as high as 2 μm/h was achieved at 500 °C, which is comparable to typical OMVPE technology. Films showed excellent alignment with the substrate both along the c-axis, and in the growth plane, and root mean square surface roughness values as low as 1.9 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 18, 15 August 2008, Pages 4050–4053
Journal: Journal of Crystal Growth - Volume 310, Issue 18, 15 August 2008, Pages 4050–4053
نویسندگان
He Huang, W.Y. Jiang, S.P. Watkins,