Temperature dependence of La2Hf2O7La2Hf2O7 thin films growth on Si(0 0 1) substrates by pulsed laser deposition

La2Hf2O7La2Hf2O7 (LHO) films have been grown on Si(0 0 1) substrates using an ultrahigh vacuum pulsed laser deposition (PLD) system at different temperatures. Structure characterization shows that the epitaxy growth of LHO films has obvious temperature dependence. The epitaxy growth of LHO films is observed over 780 °C and the predominant orientation is (001)LHO∥(001)Si and [110]LHO∥[110]Si, indicating a remarkable tendency of cube-on-cube epitaxy. The high-resolution transmission electron microscopy (HRTEM) results illustrate that the LHO film deposited at 780 °C is in pyrochlore phase and the interface between LHO and substrate is ultimately clean.