کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794944 | 1023710 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lowered stimulated emission threshold of zinc oxide by hydrogen doping with pulsed argon-hydrogen plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of hydrogen doping on the optical and electrical properties of zinc oxide (ZnO) films were investigated. We prepared about 50-nm thick ZnO films on a sapphire substrate by using a pulsed laser deposition method and used a pulse-modulated inductively coupled plasma technique (PM-ICP) to intentionally insert hydrogen into the films. An increase in the electron concentration by hydrogen doping indicated that hydrogen is actually a cause of shallow donors. Moreover, the excitation intensity threshold for optically pumped stimulated emissions was significantly reduced after hydrogen doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 306, Issue 2, 15 August 2007, Pages 316-320
Journal: Journal of Crystal Growth - Volume 306, Issue 2, 15 August 2007, Pages 316-320
نویسندگان
Naoki Ohashi, Yu-Guang Wang, Takamasa Ishigaki, Yoshiki Wada, Hiroyuki Taguchi, Isao Sakaguchi, Takeshi Ohgaki, Yutaka Adachi, Hajime Haneda,