کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794987 1023711 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of ZnO thin film on p-GaN/sapphire (0 0 0 1) by simple hydrothermal technique
چکیده انگلیسی

Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0 0 0 1) by single-step hydrothermal route at a low temperature of 90 °C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0 0 0 1) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [1 1 2¯ 0]ZnO∥[1 1 2¯ 0]GaN. Sharp luminescence peak centered at 377 nm due to excitonic recombination from ZnO thin film was observed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 3, 1 February 2008, Pages 570–574
نویسندگان
, , , , , , , ,