کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794989 | 1023711 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride](/preview/png/1794989.png)
چکیده انگلیسی
The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0×10−6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3 at 530 °C. The compressive strain of the InGaAsN was reduced under annealing in NF3 ambient, while it increased under annealing in AsH3 ambient. It is concluded that N atoms diffuse into the alloy during the NF3 exposure at 530 °C and increase the nitrogen concentration from about 1.2–1.7%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 3, 1 February 2008, Pages 579–583
Journal: Journal of Crystal Growth - Volume 310, Issue 3, 1 February 2008, Pages 579–583
نویسندگان
R.L. Woo, G. Malouf, S.F. Cheng, R.N. Woo, M. Goorsky, R.F. Hicks,