کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795027 1023712 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis and analysis of resistance-controlled Ga-doped ZnO nanowires
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Synthesis and analysis of resistance-controlled Ga-doped ZnO nanowires
چکیده انگلیسی

We have synthesized the resistance-controlled Ga-doped ZnO nanowires employing self-designed hot-walled pulsed laser deposition, and investigated the status of the Ga-doping highlighting the chemical structure change, the stack-structured morphology, and the optical property of the nanowires. Especially the chemical structure is quantitatively evaluated, verifying that the substitutional Ga atoms and oxygen vacancies are proportional to the Ga-doping concentration. The resultant data of the controlled resistance ranging from 1.6 to 70 MΩ are presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 20, 1 October 2008, Pages 4477–4480
نویسندگان
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