Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy

X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (1 1 1) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {1¯ 1 0 0}, {1¯ 1 0 2}, and {1¯ 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone.