کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795177 | 1023717 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of graphitization of the crucible on silicon carbide crystal growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Effects of graphitization degree of the crucible on the crystal growth conditions, such as temperature distribution and growth rate, were investigated by simulations. It was found that graphitization degree of the crucible increased when the crucible was repeatedly used for a long time. Power consumed by the crucible rose, whereas the total power consumed by both crucible and insulation decreased with the graphitization degree increasing. When keeping seed temperature constant, the source powder temperature and axial temperature difference between source powder and crystal seed decreased, which resulted in lower growth rate. Simulations were in good consistence with experiment results. Some clues to growth reproducibility were given.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 19, 15 September 2008, Pages 4314-4318
Journal: Journal of Crystal Growth - Volume 310, Issue 19, 15 September 2008, Pages 4314-4318
نویسندگان
Xi Liu, Er-Wei Shi, Li-Xin Song, Zhi-Zhan Chen,