کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795229 1023719 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improving the performance of thermoelectric devices by doping Ag in LaPbMnO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Improving the performance of thermoelectric devices by doping Ag in LaPbMnO3 thin films
چکیده انگلیسی

A series of Ag-doped La0.6Pb0.4MnO3 thin films were grown on vicinal cut substrates by pulsed laser deposition (PLD). Laser-induced thermoelectric voltages (LITV) had been observed in these films, and these LITV signals had been demonstrated to originate from the anisotropic Seebeck effect. By doping Ag to an optimum value, it was found that the peak values (UP) of the LITV signals were maximized, and the full-width at half-maximum (τ) of the response curves of LITV were minimized at the same time. The figure of merit (Fm) of the device used as photodetector is greatly improved by doping Ag in La0.6Pb0.4MnO3 thin films. The possible reason for these improvements had been well discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 11, 15 May 2008, Pages 2732–2737
نویسندگان
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