Structural and transport properties of β-FeSi2 [1 0 0] oriented thin film on Si(0 0 1) substrate

β-FeSi2 film on Si(0 0 1) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of β-FeSi2 film on Si(0 0 1) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of β-FeS2 film on Si(0 0 1) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.