کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795383 1023721 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers
چکیده انگلیسی

The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction of the residual stress and strain. By the means of transmission electron microscopy (TEM) and infrared (IR) transmission analyses, it was found that dislocation gliding, decreases in the size of the Te precipitates, dispersing of Te precipitates, composition homogenization, and point defects recombination contributed to a reduction of the residual stress and strain during annealing of the wafer. Additionally, the larger residual stress in CdZnTe wafers introduced bigger lattice misfits. Thus, for more the residual stress and strain in the CdZnTe wafer, the IR transmission will be lowered.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 50–54
نویسندگان
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