کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795421 | 1023721 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method](/preview/png/1795421.png)
Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at ∼590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products.
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 296–301