Epitaxial growth of (1 0 0) Fe3Si thin films on insulating substrates

(1 0 0)–Oriented Fe3Si films were epitaxially grown on the (1 0 0) MgO and (1 0 0) MgAl2O4 substrates by using rf sputtering. The lattice–mismatch relationship between Fe3Si and oxide single crystal affected the crystal growth of the (1 0 0)-oriented Fe3Si film. The lattice parameters of the epitaxial film on the (1 0 0) MgO substrates were almost the same as those of the bulk sample and the lattice-matching strain in the films was released, while the lattice-matching strain remained in the epitaxial films on the (1 0 0) MgAl2O4 substrates.