کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795694 | 1023727 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ZnO epitaxial layers grown on nitridated Si(1 0 0) substrate with HT-GaN/LT-ZnO double buffer
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25×109 cm−2, 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 2, 15 January 2008, Pages 290–294
Journal: Journal of Crystal Growth - Volume 310, Issue 2, 15 January 2008, Pages 290–294
نویسندگان
S.P. Chang, S.J. Chang, Y.Z. Chiou, C.Y. Lu, T.K. Lin, C.F. Kuo, H.M. Chang, U.H. Liaw,