Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal

The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current–voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [InCd]+, i.e. indium doping element recombined with [Vcd]2− and formed the singly negative defect complex A-center [InCd+VCd2-]- and the neutral ones [2InCd+VCd2-]0 and [Incd+(InCd+VCd2-)-]0. Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.