کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795843 1023730 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of SrMoO4 thin films on Si substrates by chemical solution deposition
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Preparation of SrMoO4 thin films on Si substrates by chemical solution deposition
چکیده انگلیسی

Crystallized SrMoO4 thin films were prepared on (1 0 0)-oriented Si substrates by chemical solution deposition (CSD) method. The effects of the processing parameters on the growth of the films were investigated. Dense scheelite-type SrMoO4 thin films could be prepared when calcined between 350 and 800 °C. The absorption band related to vibration mode of MoO42− tetrahedra in Fourier transform infrared (FT-IR) spectra of SrMoO4 thin films annealed at 350–900 °C was observed that undoubtedly confirmed the appearance of SrMoO4 phase. The results showed that CSD method could be used to prepare SrMoO4 thin films at rather low temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 4, 15 February 2008, Pages 789–793
نویسندگان
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