Optical studies of high-field carrier transport of InN thick film grown on GaN

Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ   valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III–V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.