کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796212 1023740 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth of micropipe free 4H–SiC on 4H–SiC{033¯8} seed and high-purity semi-insulating 6H–SiC
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystal growth of micropipe free 4H–SiC on 4H–SiC{033¯8} seed and high-purity semi-insulating 6H–SiC
چکیده انگلیسی

Micropipe free c-plane 4H–SiC wafers were achieved by sublimation growth on the 4H–SiC {033¯8} seed. 4H–SiC {033¯8} seeds were obtained by inclining the c  -plane to 〈011¯0〉 at 54.7°. A transmission X-ray topograph of the micropipe free c-plane wafer revealed that there were no macroscopic defects with lattice displacements. Crystal growth of undoped (vanadium-free) semi-insulating 6H–SiC was carried out by our sublimation system. In order to achieve high resistivity, high-purity SiC source and controlled instruments were used for the reduction of nitrogen, boron and metal impurity backgrounds. Hence high-purity and high-resistivity 6H–SiC 2 and 3 in in diameter were developed for high-frequency power transistors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 188–191
نویسندگان
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