کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796212 | 1023740 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth of micropipe free 4H–SiC on 4H–SiC{033¯8} seed and high-purity semi-insulating 6H–SiC
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Micropipe free c-plane 4H–SiC wafers were achieved by sublimation growth on the 4H–SiC {033¯8} seed. 4H–SiC {033¯8} seeds were obtained by inclining the c -plane to 〈011¯0〉 at 54.7°. A transmission X-ray topograph of the micropipe free c-plane wafer revealed that there were no macroscopic defects with lattice displacements. Crystal growth of undoped (vanadium-free) semi-insulating 6H–SiC was carried out by our sublimation system. In order to achieve high resistivity, high-purity SiC source and controlled instruments were used for the reduction of nitrogen, boron and metal impurity backgrounds. Hence high-purity and high-resistivity 6H–SiC 2 and 3 in in diameter were developed for high-frequency power transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 188–191
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 188–191
نویسندگان
Hiromu Shiomi, Hiroyuki Kinoshita, Tomoaki Furusho, Toshihiko Hayashi, Michio Tajima, Eiko Higashi,