کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796215 | 1023740 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia](/preview/png/1796215.png)
چکیده انگلیسی
Gallium nitride (GaN) crystals were synthesized by the reaction between gallium-containing solutions and flowing ammonia at temperatures between 900 and 1050 °C under atmospheric pressure. The crystals were colorless or amber with a size up to 1 mm. Two main morphologies were observed: platelet-like and prism-like, which depended on experimental conditions. The observed varieties of the morphology in the cross-section of GaN samples are attributed to a non-uniform distribution of nitrogen species in solution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 201–205
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 201–205
نویسندگان
G. Sun, E. Meissner, S. Hussy, B. Birkmann, J. Friedrich, G. Müller,