Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering

GaN nanorods were synthesized by ammoniating Ga2O3/BN films deposited on the Si (1 1 1) substrate by radio frequency magnetron sputtering technique. X-ray diffraction, Fourier-transform infrared spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy were carried out to characterize the structural and morphological properties of the as-synthesized nanorods. The results showed that the synthesized nanorods were single-crystal hexagonal wurtzite GaN with diameters ranging from 100 to 400 nm and lengths typically up to 10 μm. The representative photoluminescence spectra measured at room temperature exhibited a strong and broad emission peak at 369 nm and a relatively weak emission peak at 403 nm. The growth mechanism of GaN nanorods is briefly discussed.