Fabrication of actinomorphic GaN nanowires by sputtering and ammoniating progress

Actinomorphic GaN nanowires clusters have been achieved by ammoniating Ga2O3 thin films deposited on the Mg layer on the Si (1 1 1) substrate. The resulting materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are actinomorphic nanowires clusters with the glazed surface. XRD, HRTEM and SAED indicate that the nanowires are single-crystal hexagonal GaN with a wurtzite structure.