کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796289 | 1023740 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of VGFB-grown ZnTe single crystals by means of synchrotron X-ray topo-tomographic technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of VGFB-grown ZnTe single crystals by means of synchrotron X-ray topo-tomographic technique Characterization of VGFB-grown ZnTe single crystals by means of synchrotron X-ray topo-tomographic technique](/preview/png/1796289.png)
چکیده انگلیسی
Lattice imperfections in (1 1 1)-oriented ZnTe wafers were characterized by means of X-ray Laue topography using the tomographic technique. The specimens were grown by the vertical gradient freezing Bridgman (VGFB) method. Specimens were set for Bragg diffraction (transmission case) associated with the reciprocal-lattice vector g and were mounted such that they could be rotated around g by means of a rotation stage (Ï). White X-ray topographs of the 20-2 spot were taken at rotation angles of Ï=0°, ±10°, ±20°, ±30°. We observed a number of twins in spite of the nearly perfect ZnTe crystal with a low dislocation density. The stacking fault energy of ZnTe was found to be lower than for other compound semiconductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 538-541
Journal: Journal of Crystal Growth - Volume 292, Issue 2, 1 July 2006, Pages 538-541
نویسندگان
Kaoru Mizuno, Takuo Kobayashi, Kimihiko Morikawa, Hiroyuki Okamoto, Toshiaki Asahi,