کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796306 | 1023741 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(0 0 1) substrates by molecular beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(0 0 1) substrates by molecular beam epitaxy Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(0 0 1) substrates by molecular beam epitaxy](/preview/png/1796306.png)
چکیده انگلیسی
This study investigates the tensile-strained growth of LaAlO3 on SrTiO3(0 0 1) substrates by molecular beam epitaxy (MBE). Reflection high energy electron diffraction (RHEED) analysis shows that for thicknesses smaller than 3.8 nm, LaAlO3 films grow pseudomorphically. Plastic relaxation starts for films thicker than this critical thickness of 3.8 nm. The in- and out-of-plane lattice parameters of the strain-relaxed layers have been measured by ex situ X-ray diffraction (XRD) at grazing angles. The relaxation mechanism is discussed on the basis of these experiments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 306, Issue 1, 1 August 2007, Pages 47–51
Journal: Journal of Crystal Growth - Volume 306, Issue 1, 1 August 2007, Pages 47–51
نویسندگان
C. Merckling, M. El-Kazzi, G. Delhaye, V. Favre-Nicolin, Y. Robach, M. Gendry, G. Grenet, G. Saint-Girons, G. Hollinger,