کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796369 | 1023743 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This paper reports a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 film on stainless steel (SS) substrate. It was formed through the silicidation reaction of Fe and Si at a Fe-rich interface at an elevated temperature of 600 °C. β-FeSi2 film was deposited on it at low temperature around 400 °C. Auger electron spectroscopy depth profile showed that the inter-diffusions of Fe, Si and impurities contained in the SS substrate were effectively blocked by the buffer layer. The adhesive ability to SS substrate and crystallinity of β-FeSi2 film were clearly improved by the introduction of the buffer layer, thus also induced the decrease of residual carrier concentration, which was revealed by capacity–voltage measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 307, Issue 1, 1 September 2007, Pages 82–86
Journal: Journal of Crystal Growth - Volume 307, Issue 1, 1 September 2007, Pages 82–86
نویسندگان
Zhengxin Liu, Masato Osamura, Teruhisa Ootsuka, Ryo Kuroda, Yasuhiro Fukuzawa, Naotaka Otogawa, Yasuhiko Nakayama, Yunosuke Makita, Hisao Tanoue,