کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796369 1023743 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate
چکیده انگلیسی

This paper reports a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 film on stainless steel (SS) substrate. It was formed through the silicidation reaction of Fe and Si at a Fe-rich interface at an elevated temperature of 600 °C. β-FeSi2 film was deposited on it at low temperature around 400 °C. Auger electron spectroscopy depth profile showed that the inter-diffusions of Fe, Si and impurities contained in the SS substrate were effectively blocked by the buffer layer. The adhesive ability to SS substrate and crystallinity of β-FeSi2 film were clearly improved by the introduction of the buffer layer, thus also induced the decrease of residual carrier concentration, which was revealed by capacity–voltage measurement.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 307, Issue 1, 1 September 2007, Pages 82–86
نویسندگان
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