کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796525 | 1023747 | 2007 | 6 صفحه PDF | دانلود رایگان |

Single crystals of Ge1−xSnxTe compounds with x=0, 0.8, 0.9 and 1.0 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, metallographic microscope as well as electron-probe microanalysis (EPMA). Electrical property of the as-grown samples was characterized using room temperature resistivity and Hall measurements. The thermoelectric behaviors for the Ge1−xSnxTe crystals were studied by means of thermal and carrier transport measurements. Temperature dependences of resistivity, Seebeck coefficient and thermal conductivity for the various compositions of Ge1−xSnxTe were analyzed. A two-valence band model was proposed to describe the temperature dependence of thermoelectric property of the Ge1−xSnxTe crystals. The dimensionless thermoelectric figure of merit ZT for the alloys was evaluated and discussed.
Journal: Journal of Crystal Growth - Volume 304, Issue 1, 1 June 2007, Pages 127–132