X-ray diffraction analysis of an osmium silicide epilayer grown on Si(1Â 0Â 0) by molecular beam epitaxy

Osmium silicide epilayers have been grown by molecular beam epitaxy on (1 0 0)-oriented Si wafers. Multiple-phase (Os2Si3 and OsSi2) and single-phase epilayers are observed, depending on the growth parameters. In this paper we report on a detailed investigation of the structure of a single-phase Os2Si3 epilayer and epilayer/silicon interface using X-ray diffraction, and reflectivity analysis. Optical absorption results will also be presented.