کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796778 | 1524484 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure](/preview/png/1796778.png)
چکیده انگلیسی
Highly c-axis-oriented ZnO films were successfully deposited on the nucleation sides of freestanding diamond films by RF reactive magnetron sputtering. I–V characteristics of ultraviolet (UV) photodetectors with ZnO/diamond structure were studied and a significant photoresponse was observed under UV light illumination. The dark-current and the photocurrent of the ZnO photodetectors were relative to the grain size and the quality of ZnO films. For the photodetector with a bigger grain size, a weaker dark current and a stronger photocurrent were obtained under 10 V bias voltage. The photocurrent rise and decay process confirmed the carrier-trapping effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 353–357
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 353–357
نویسندگان
Jian Min Liu, Yi Ben Xia, Lin Jun Wang, Qing Feng Su, Wei Min Shi,