کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796834 | 1023755 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ab initio study of ZnO- and GaN-based diluted magnetic semiconductors and its magnetic properties
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We study the magnetic and electronic properties of V- and Mn-doped hexagonal ZnO and cubic GaN by using the full-potential linear muffin-tin orbital method. The calculations are made at several concentrations from about 4% to 12% of dopant atoms in the 48 and 64 atoms supercell for ZnO and GaN, respectively. For Zn1âxMxO (M=V and Mn) at x=0.083 (pair impurities), the energetically favorable magnetism is the antiferromagnetic states. For V-doped ZnO with the defect, the results show that it is strongly correlated between the energy states by the defect of Zn or O site and those by V impurity in ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 1, 18 January 2006, Pages 74-77
Journal: Journal of Crystal Growth - Volume 287, Issue 1, 18 January 2006, Pages 74-77
نویسندگان
B.S. Kang, W.C. Kim, Y.Y. Shong, H.J. Kang,