کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796943 | 1524486 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer](/preview/png/1796943.png)
چکیده انگلیسی
ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 290, Issue 2, 1 May 2006, Pages 334-337
Journal: Journal of Crystal Growth - Volume 290, Issue 2, 1 May 2006, Pages 334-337
نویسندگان
Ruijin Hong, Jianda Shao, Hongbo He, Zhengxiu Fan,