Compositional plane of a wide-gap semiconductor CaCdSeS lattice-matched to InP and GaAs

We have investigated compositional plane of a wide band gap solid solution semiconductor Ca1−xCdxSe1−ySy (x⩽0.32) using powder synthesis under thermal equilibrium condition. The solubility limit at 1273 K varies with respect to the Se concentration y, taking a minimum Cd solubility limit of 0.12 at y=0.8 and a maximum limit of 0.32 at y=1.0. It is found that the system can be lattice-matched to GaAs and InP under covering the energy band gap of ultraviolet-visible region. These results allow to design optoelectronic devices adopting the Ca1−xCdxSe1−ySy system.