Seeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport

We demonstrated seeded growth of AlN on large-area Al- and N-polar <0 0 0 1>-oriented AlN seeds using the physical vapor transport method (PVT). In both cases, crystals having a diameter of 15 mm were obtained from 5 mm seeds. Based on growth step and terrace width analyses, it was found that the N-polar face was suitable for growth within a large window of growth parameters while the Al-polar seeds yielded high-quality crystals only at low supersaturation.