کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797056 | 1023761 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect analysis in Czochralski-grown Yb:FAP crystal
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Growth-induced defects in Yb:FAP crystals grown by the Czochralski method have been investigated by optical microscopy, chemical etching, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS). Anisotropic etching features have been observed on two FAP crystal planes: (0 0 0 1) and (101¯0). The shape of etch pits on the (0 0 0 1) plane is hexagonal, while the etch pits on the (101¯0) plane have a variety of irregular shapes. It is also found that the density of etch pit varies along the boule. Based on the experimental observations, the formation mechanisms of growth defects are discussed, and methods for reducing the growth-induced defect concentration is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 498–501
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 498–501
نویسندگان
Pingxin Song, Zhiwei Zhao, Xiaodong Xu, Peizhen Deng, Jun Xu,